23A640-I(2010) 查看數據表（PDF） - Microchip Technology

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23A640-I
(Rev.:2010)

64K SPI Bus Low-Power Serial SRAM

Microchip Technology 

23X640

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (†)

VCC.............................................................................................................................................................................4.5V

All inputs and outputs w.r.t. VSS ......................................................................................................... -0.3V to VCC +0.3V

Storage temperature .................................................................................................................................-65°C to 150°C

Ambient temperature under bias ...............................................................................................................-40°C to 125°C

ESD protection on all pins ...........................................................................................................................................2kV

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an

extended period of time may affect device reliability.

TABLE 1-1: DC CHARACTERISTICS

DC CHARACTERISTICS

Industrial (I): TA = -40°C to +85°C

Automotive (E): TA = -40°C to +125°C

Param.

No.

Sym.

Characteristic

Min. Typ(1) Max. Units

Test Conditions

D001 VCC

D001 VCC

D002 VIH

D003 VIL

D004 VOL

D005 VOH

Supply voltage

Supply voltage

High-level input

voltage

Low-level input

voltage

Low-level output

voltage

High-level output

voltage

1.5

2.7

.7 VCC

-0.3

—

1.95

V 23A640 (I-Temp)

—

3.6

V 23K640 (I, E-Temp)

—

VCC

V

+0.3

— 0.2xVCC V

—

—

0.2

V IOL = 1 mA

VCC -0.5 —

—

V IOH = -400 A

D006 ILI

Input leakage

current

—

—

±0.5 A CS = VCC, VIN = VSS OR VCC

D007

D008

ILO

Output leakage

current

ICC Read

Operating current

—

—

±0.5 A CS = VCC, VOUT = VSS OR VCC

—

—

3

mA FCLK = 1 MHz; SO = O

—

—

6

mA FCLK = 10 MHz; SO = O

—

—

10

mA FCLK = 20 MHz; SO = O

D009 ICCS

Standby current

—

0.2

1

A CS = VCC = 1.8V, Inputs tied to VCC

or VSS

—

1

4

A CS = VCC = 3.6V, Inputs tied to VCC

or VSS

—

5

10

A CS = VCC = 3.6V, Inputs tied to VCC

or VSS @ 125°C

D010 CINT

Input capacitance

7

pF VCC = 0V, f = 1 MHz, Ta = 25°C

(Note 1)

D011 VDR

RAM data retention

—

1.2

—

V

voltage (2)

Note 1: This parameter is periodically sampled and not 100% tested. Typical measurements taken at room

temperature (25°C).

2: This is the limit to which VDD can be lowered without losing RAM data. This parameter is periodically

sampled and not 100% tested.

DS22126D-page 2

 2010 Microchip Technology Inc.

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