IPB65R125C7 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

生产厂家

IPB65R125C7

Metal Oxide Semiconductor Field Effect Transistor 650V CoolMOS™ C7 Power Transistor

Infineon Technologies 

650VCoolMOS™C7PowerTransistor

IPB65R125C7

3Thermalcharacteristics

Table3Thermalcharacteristics

Parameter

Symbol

Thermal resistance, junction - case

RthJC

Thermal resistance, junction - ambient RthJA

Thermal resistance, junction - ambient

for SMD version

RthJA

Soldering temperature, wave- & reflow

soldering allowed

Tsold

Min.

-

-

-

Values

Typ. Max.

-

1.24

-

62

35 45

Unit Note/TestCondition

°C/W -

°C/W device on PCB, minimal footprint

Device on 40mm*40mm*1.5mm

epoxy PCB FR4 with 6cm² (one

°C/W

layer, 70µm thickness) copper

area for drain connection and

cooling. PCB is vertical without air

stream cooling.

-

-

260 °C reflow MSL1

Final Data Sheet

5

Rev.2.0,2013-10-11

Share Link: