2N6029 查看數據表（PDF） - Central Semiconductor

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2N6029

COMPLEMENTARY SILICON POWER TRANSISTORS

Central Semiconductor 

2N5629 2N5630 NPN

2N6029 2N6030 PNP

COMPLEMENTARY SILICON

POWER TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N5629, 2N6029

series devices are complementary silicon power

transistors, manufactured by the epitaxial base

process, designed for high voltage and high power

amplifier applications.

MARKING: FULL PART NUMBER

TO-3 CASE

MAXIMUM RATINGS: (TC=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IB

PD

TJ, Tstg

JC

2N5629

2N6029

100

2N5630

2N6030

120

100

120

7.0

16

20

5.0

200

-65 to +200

0.875

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

ICBO

VCB=Rated VCBO

ICEX

VCE=Rated VCEO, VEB=1.5V

ICEX

VCE=Rated VCEO, VEB=1.5V, TC=150°C

ICEO

VCE=½Rated VCEO

IEBO

VEB=7.0V

BVCEO

IC=200mA (2N5629, 2N6029)

100

BVCEO

IC=200mA (2N5630, 2N6030)

120

VCE(SAT) IC=10A, IB=1.0A

VCE(SAT) IC=16A, IB=4.0A

VBE(SAT) IC=10A, IB=1.0A

VBE(ON)

VCE=2.0V, IC=8.0A

hFE

VCE=2.0V, IC=8.0A (2N5629, 2N6029)

25

hFE

VCE=2.0V, IC=8.0A (2N5630, 2N6030)

20

hFE

VCE=2.0V, IC=16A

4.0

hfe

VCE=10V, IC=4.0A, f=1.0kHz

15

fT

VCE=20V, IC=1.0A, f=500kHz

1.0

Cob

VCB=10V, IE=0, f=100kHz (NPN)

Cob

VCB=10V, IE=0, f=100kHz (PNP)

MAX

1.0

1.0

5.0

1.0

1.0

1.0

2.0

1.8

1.5

100

80

500

1.0

UNITS

V

V

V

A

A

A

W

°C

°C/W

UNITS

mA

mA

mA

mA

mA

V

V

V

V

V

V

MHz

pF

nF

R1 (19-March 2014)

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