WS57C45-35TMB 查看數據表（PDF） - STMicroelectronics

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WS57C45-35TMB

HIGH-SPEED 2K x 8 REGISTERED CMOS PROM/RPROM

STMicroelectronics 

WS57C45

PROGRAMMING INFORMATION

DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 5.6 V ± 0.25 V, VPP = 13.5 ± 0.5 V)

SYMBOLS

PARAMETER

MIN

MAX

ILI

Input Leakage Current

(VIN = VCC or Gnd)

IPP

VPP Supply Current During

Programming Pulse

–10

10

60

ICC

VCC Supply Current

VI L

Input Low Voltage

VI H

Input High Voltage

VOL

Output Low Voltage During Verify

(IOL = 16 mA)

VOH

Output High Voltage During Verify

(IOH = –4 mA)

–0.1

2.0

25

0.8

VCC + 0.3

0.45

2.4

NOTE: 8. VPP must not be greater than 14 volts including overshoot.

AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 5.6 V ± 0.25 V, VPP = 13.5 ± 0.5 V)

SYMBOLS

PARAMETER

MIN

MAX

tPW

Programming Pulse Width

tAS

Address Setup Time

tDS

Data Setup Time

tAH

Address Hold Time

tDH

Data Hold Time

tR, tF

VPP Rise and Fall Time

tVD

Delay to VFY

tVP

VFY Pulse Width

tDV

VFY Data Valid

tDZ

VFY HIGH to High Z

0.1

10

1.0

1.0

1.0

1.0

1.0

1.0

2.0

1.0

1.0

UNITS

µA

mA

mA

V

V

V

V

UNITS

ms

µs

µs

µs

µs

µs

µs

µs

µs

µs

2-28

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