BLF278 查看數據表（PDF） - Philips Electronics
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BLF278 Datasheet PDF : 21 Pages
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Philips Semiconductors
VHF push-pull power MOS transistor
Product Specification
BLF278
20
handbook, halfpage
(1)
Gp
(2)
(dB)
10
MGE614
60
handbook, halfpage
ηD
(%)
40
20
(1)
(2)
MGE612
0
0
100
200
300
PL (W)
Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; f = 225 MHz;
ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section).
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.18 Power gain as a function of load power,
typical values.
0
0
100
200
300
PL (W)
Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; f = 225 MHz;
ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section).
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.19 Efficiency as a function of load power,
typical values.
handbook4,0h0alfpage
PL
(W)
300
200
(1)
(2)
MGE613
100
0
0
5
10
15
Pi (W)
Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; f = 225 MHz;
ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section).
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.20 Load power as a function of input power,
typical values.
1996 Oct 21
14
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