STTH5R06 查看數據表（PDF） - STMicroelectronics
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STTH5R06 Datasheet PDF : 9 Pages
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STTH5R06
Figure 9: Relative variations of dynamic
parameters versus junction temperature
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
S factor
IRM
QRR
50
Tj(°C)
75
IF=IF(AV)
VR=400V
Reference: Tj=125°C
100
125
Figure 10: Transient peak forward voltage
versus dIF/dt (90% confidence)
VFP(V)
20
IF=IF(AV)
18
Tj=125°C
16
14
12
10
8
6
4
2
dIF/dt(A/µs)
0
0
100
200
300
400
500
Figure 11: Forward recovery time versus dIF/dt
(90% confidence)
tfr(ns)
120
100
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
80
60
40
20
dIF/dt(A/µs)
0
0
100
200
300
400
500
Figure 12: Junction capacitance versus
reverse voltage applied (typical values)
C(pF)
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
10
1
VR(V)
10
100
1000
Figure 13: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy FR4, eCU=35µm) (DPAK and D2PAK)
Rth(j-a)(°C/W)
100
90
80
70
60
50
40
30
20
10
S(Cu)(cm²)
0
0
2
4
6
8
10
12
14
16
18
20
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