BUV22(2001) 查看數據表（PDF） - ON Semiconductor
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BUV22 Datasheet PDF : 4 Pages
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BUV22
40
10
1
0.1
1
10
100
250
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 2. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.
At high case temperatures, thermal limitations will reduce
the power that can handled to values less than the limitations
imposed by second breakdown.
2.0
IC/IB = 8
1.6
1.2
VBE
0.8
VCE
0.4
0
1
10
IC, COLLECTOR CURRENT (A)
Figure 3. “On” Voltages
50
45
40
35
30
25
20
15
10
5
0
0.1
VCE = 5 V
1
10
100
IC, COLLECTOR CURRENT (A)
Figure 4. DC Current Gain
3.0
2.0
1.0
tS
0.4
0.3
ton
0.2
tF
4
8
12
16
20
24
IC, COLLECTOR CURRENT (A)
Figure 5. Resistive Switching Performance
VCC
RC
IB2
IB1
RB
RC – RB: Non inductive resistances
104 µF
VCC = 100 V
RC = 5 Ω
RB = 2.7 Ω
IB1 = IB2
IC/IB = 8
Figure 6. Switching Times Test Circuit
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