FSAM15SH60 查看數據表（PDF） - Fairchild Semiconductor

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FSAM15SH60

SPMTM (Smart Power Module)

Fairchild Semiconductor 

Absolute Maximum Ratings

Thermal Resistance

Item

Junction to Case Thermal

Resistance

Symbol

Condition

Rth(j-c)Q Each IGBT under Inverter Operating Condition

Rth(j-c)F Each FWDi under Inverter Operating Condition

Min. Typ. Max. Unit

-

- 2.71 °C/W

-

- 3.71 °C/W

Contact Thermal

Resistance

Rth(c-h) Ceramic Substrate (per 1 Module)

Thermal Grease Applied (Note 3)

-

- 0.06 °C/W

Note:

2. For the measurement point of case temperature(TC), please refer to Fig. 2.

3. The thickness of thermal grease should not be more than 100um.

Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)

Inverter Part

Item

Collector - Emitter

Saturation Voltage

FWDi Forward Voltage

Switching Times

Collector -Emitter

Leakage Current

Symbol

VCE(SAT)

VFM

tON

tC(ON)

tOFF

tC(OFF)

trr

ICES

Condition

VCC = VBS = 15V

VIN = 0V

IC = 15A, TJ = 25°C

VIN = 5V

IC = 15A, TJ = 25°C

VPN = 300V, VCC = VBS = 15V

IC = 15A, TJ = 25°C

VIN = 5V ↔ 0V, Inductive Load

(High, Low-side)

(Note 4)

VCE = VCES, TJ = 25°C

Min.

-

-

-

-

-

-

-

-

Typ.

-

-

0.39

0.12

0.53

0.16

0.1

-

Max. Unit

2.8

V

2.5

V

-

us

-

us

-

us

-

us

-

us

250 uA

Note:

4. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition

internally. For the detailed information, please see Fig. 4.

©2003 Fairchild Semiconductor Corporation

Rev. D, August 2003

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