2N2894ACSM(2000) 查看數據表（PDF） - Semelab - > TT Electronics plc

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2N2894ACSM
(Rev.:2000)

HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

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2N2894ACSM

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

V(BR)CBO*

V(BR)CEO

V(BR)EBO

ICBO

ICES

VCE(sat)

VBE(sat)

hFE

fT

Cebo

Collector – Base Breakdown Voltage IC = 10mA

Collector – Emitter Breakdown Voltage IC = 10mA

Emitter – Base Breakdown Voltage IE = 10mA

Collector Cut-off Current

VCB = –6V

Collector Cut-off Current

VBE = 0

IC = –10mA

Collector – Emitter Saturation Voltage IC = –30mA

IC = –100mA

IC = –10mA

Base – Emitter On Voltage

IC = –30mA

IC = –100mA

IC = –10mA

IC = –30mA

DC Current Gain

IC = –100mA

IC = –30mA

Current Gain Bandwidth Product

Emitter – Base – Capacitance

VCE = –10V

IC = –30mA

VEB = –5V

f = 1MHz

IE = 0

IB = 0

IC = 0

Tamb = 125°C

VCE = –6V

IB = –1mA

IB = –3mA

IB = –10mA

IB = –1mA

IB = –3mA

IB = –10mA

VCE = –0.3V

VCE = –0.5V

VCE = –1V

VCE = –0.5V

Tamb = 125°C

f = 100MHz

IC = 0

– 12

– 12

–4

–0.78

–0.85

30

40

25

17

400

Ccbo

Collector – Base – Capacitance

VCB = –5V

f = 1MHz

IC = 0

ton

Turn on Time

toff

Turn off Time

IC = –30mA VCE = –2V

IB2 = –1.5mA

IC = –30mA VCE = –2V

IB1 = IB2= –1.5mA

* Pulse Test: tp £ 300ms, d £ 2%.

Typ. Max. Unit

V

– 10

nA

– 80

–0.15

–0.20 V

– 0.50

–0.98

–1.2. V

–1.7

150

–—

MHz

6

pF

6

pF

60

ns

9

ns

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 3/00

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