NTE353 查看數據表（PDF） - NTE Electronics

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NTE353

Silicon NPN Transistor RF Power Output PO = 4W @ 175MHz

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics

DC Current Gain

hFE VCE = 5V, IC = 250mA

5––

Dynamic Characteristics

Output Capacitance

Functional Test

Cob VCB = 12.5V, IE = 0, f = 100kHz

– 17 20 pF

Common–Emitter Amplifier Power Gain

Collector Efficiency

GPE POUT = 4W, VCC = 12.5V,

ICmax = 620mA, f = 175MHz

12 –

η

POUT = 4W, VCC = 12.5V, f = 175MHz 50 –

– dB

–%

.250

(6.35)

.225 (5.72)

.725 (18.42)

E

C

.122 (3.1) Dia

(2 Holes)

B

E

.860 (21.84)

.378 (9.56)

.005 (0.15)

.185 (4.7)

.975 (24.77)

.255

(6.5)

.085 (2.14)

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