NTE484 查看數據表（PDF） - NTE Electronics

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NTE484

Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz

NTE Electronics 

Electrical Characteristic (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Dynamic

Output Power

Power Gain

Impedance

Output Capacitance

PO VCE = 12.5V, f = 836MHz

PG VCE = 12.5V, f = 836MHz

Zs VCE = 12.5V, PO= 25W, f = 836MHz

Zcl

Cob VCB = 12.5V, IE = 0, f = 1MHz

25

–

–W

5

–

– dB

– 4.9– j5.8 –

Ω

– 1.4– j3.5 –

Ω

–

–

65 pF

.960

(24.38)

Max

.725 (18.42)

B

C

.325 (8.28) Max

.195 (4.97) Max

.130 (3.3) Dia

.380 (5.72) Dia Max

E

B

.225 (5.72) Max

.285

(7.25)

Max

.180

(4.57)

Max

.730 (18.54)

.960 (24.38) Max

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