NTE2410 查看數據表（PDF） - NTE Electronics

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NTE2410

Silicon NPN Transistor High Voltage Amp/Driver (Comp to NTE2411)

NTE Electronics 

NTE2410

Silicon NPN Transistor

High Voltage Amp/Driver

(Comp to NTE2411)

Description:

The NTE2410 is a silicon NPN transistor in an SOT–23 type surface mount case designed for use

in high voltage applications.

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA

Total Power Dissipation (TA = +25°C, FR–5 Board, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . 225mW

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/°C

Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 556°C/mW

Total Power Dissipation (TA = +25°C, Alumina Substrate, Note 2), PD . . . . . . . . . . . . . . . . . 300mW

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C

Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 417°C/mW

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).

Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

Collector–Emitter Breakdown Voltage

Collector–Base Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICBO

IC = 1mA, IB = 0, Note 3

IC = 100µA, IE = 0

IE = 10µA, IC = 0

VCB = 120V, IE = 0

VCB = 120V, IE = 0, TA = +100°C

Emitter Cutoff Current

IEBO VEB = 4V, IC = 0

Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.

Min Typ Max Unit

160 –

180 –

6

–

–

–

–

–

–

–

–

V

–

V

–

V

50 nA

50 µA

50 nA

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