NTE71 查看數據表（PDF） - NTE Electronics
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NTE71 Datasheet PDF : 2 Pages
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NTE71
Silicon NPN Transistor
High Current Amp, Fast Switch
Description:
The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that
provides surface stabilization for high voltage operation and enhances long term reliability.
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Emitter–Base VOltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TC = +25°C unless otherwise spcified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Sustaining Voltage
Emitte Cutoff Current
Collector Cutoff Current
ON Characteristics (Note 1)
V(BR)CEO(sus) IC = 100mA
IEBO
VEB = 10V
ICEX
VCE = 150V, VBE = –1.5V
VCE = 150V, VBE = –1.5V,
TC = +150°C
DC Current Gain
Collector Saturation Voltage
Base–Emitter Voltage
hFE
VCE(sat)
VBE
VCE = 3V, IC = 10A
IC = 10A, IB = 1.5A
IC = 10A, IB = 1.5A
Note 1. Pulse test: Pulse Width = 300µs, Duy Cycle ≤ 2%.
Min Typ Max Unit
150 – – V
– – 250 µA
– – 2 mA
– – 20 mA
10 – 50
– – 1.5 V
– – 2.5 V
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