NTE2544 查看數據表（PDF） - NTE Electronics

零件编号

产品描述 (功能)

生产厂家

NTE2544

Silicon NPN Transistor Darlington Driver

NTE Electronics 

NTE2544

Silicon NPN Transistor

Darlington Driver

Features:

D Darlington Conncetion

D High DC Current Gain

D Low Dependence of DC Current Gain on Temperature

Applications:

D Motor Driver

D Printer Hammer Driver

D Relay Driver

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

Emitter–Base Voltge, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A

Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A

Collector Dissiption, PC

TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

ICBO

IEBO

hFE

VCB = 100V, IE = 0

VEB = 5V, IC = 0

VCE = 3V, IC = 0.5A

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

VCE = 3V, IC = 1A

VCE(sat) IC = 1A, IB = 2mA

VBE(sat) IC = 1A, IB = 2mA

V(BR)CBO IC = 100µA, IE = 0

V(BR)CEO IC = 10mA, RBE = ∞

Min Typ Max Unit

–

–

10 µA

–

–

2.5 mA

1000 –

–

2000 – 30000

–

–

1.5 V

–

–

2.0 V

120 –

–

V

120 –

–

V

Share Link: