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NTE320F

Silicon NPN RF Power Transistor 40W @ 175MHz

NTE Electronics 

NTE320/NTE320F

Silicon NPN RF Power Transistor

40W @ 175MHz

Description:

The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal

amplifier applications required in commercial and industrial equipment operating to 300MHz.

Features:

D Specified 12.5V, 175MHz Characteristics:

Output Power: 40W

Minimum Gain: 4.5dB

Efficiency: 70%

D Available in Two Different Package Styles:

T72 Stud Mount: NTE320

W52K Flange Mount: NTE320F

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V

Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A

Total Device Dissipation (TC = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 460mW/°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Stud Torque (NTE320 Only, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5in. lb.

Note 1. These devices are designed for RF operation. The total device dissipation rating applies

only when the devices are operated as RF amplifiers.

Note 2. For repeated assembly, use 5in. lb.

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