NTE2369 查看數據表（PDF） - NTE Electronics

零件编号

产品描述 (功能)

生产厂家

NTE2369

Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Emitter Saturation Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Input OFF Voltage

Input ON Voltage

Input Resistance

VCE(sat) IC = 5mA, IB = 0.25mA

V(BR)CBO IC = 10µA, IE = 0

V(BR)CEO IC = 100µA, RBE = ∞

VI(off) VCE = 5V, IC = 100µA

VI(on) VCE = 200mV, IC = 5mA

R1

– 0.1 0.3 V

50 –

–

V

50 –

–

V

0.5 – 0.8 V

0.7 – 1.3 V

3.29 4.7 6.11 kΩ

Input Resistance Ratio

R1/R2

0.09 0.1 0.11

Collector

(Output)

Schematic Diagram

Collector

(Output)

R1

Base

(Input)

R2

R1

Base

(Input)

R2

Emitter

(GND)

NPN

.165 (4.2)

Max

.126

(3.2)

Max

.071

(1.8)

.500

(12.7)

Max

Emitter

(GND)

PNP

ECB

.050 (1.27)

.050 (1.27)

.035 (0.9)

.102

(2.6)

Max

Share Link: