5962F9751201V9A 查看數據表（PDF） - Intersil

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产品描述 (功能)

生产厂家

5962F9751201V9A

Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier

Intersil 

HS-22620RH

Die Characteristics

DIE DIMENSIONS:

145 mils x 116 mils x 19 mils ±1 mil

3670µm x 2950µm x 483µm ±25.4µm

INTERFACE MATERIALS:

Glassivation:

Type: Nitride (S13N4) over Silox (SIO2, 5% Phos.)

Silox Thickness: 12kÅ ±2kÅ

Nitride Thickness: 3.5kÅ ±1.5kÅ

Top Metallization:

Type: Al, 1% Cu

Thickness: 14kÅ ±2kÅ

Substrate:

Bipolar Bonded Wafer (EBHF)

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential (Powered Up):

Unbiased Silicon

(WEB pad provided for substrate tie-off.)

ADDITIONAL INFORMATION:

Worst Case Current Density:

<2 x 105 A/cm2

Transistor Count:

184

Metallization Mask Layout

HS-22620RH

BAL1A

(2)

BAL2A

(1)

VCCA

(18)

VEEA

(17)

+INA (3)

(16) OUTA

-INA (4)

-INB (6)

(15) COMPA

(14) WEB

(13) COMPB

+INB (7)

(8)

BAL1B

(9)

BAL2B

4

(10)

VCCB

(12) OUTB

(11)

VEEB

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