BRY56A 查看數據表（PDF） - Philips Electronics
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BRY56A Datasheet PDF : 8 Pages
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Philips Semiconductors
Programmable unijunction transistor
Product specification
BRY56A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient in free air
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IP
IV
Voffset
IGAO
IGKS
VAK
VOM
tr
peak point current
VS = 10 V; RG = 10 kΩ; see Fig.7
VS = 10 V; RG = 100 kΩ; see Fig.7
valley point current
VS = 10 V; RG = 10 kΩ; see Fig.7
VS = 10 V; RG = 100 kΩ; see Fig.7
offset voltage
typical curve; IA = 0; see Fig.7
gate-anode leakage current IK = 0; VGA = 70 V; see Fig.5
gate-cathode leakage current VAK = 0; VKG = 70 V; see Fig.6
anode-cathode voltage
IA = 100 mA
peak output voltage
VAA = 20 V; C = 10 nF;
see Figs 8 and 9
rise time
VAA = 20 V; C = 10 nF; see Fig.9
MIN.
−
−
2
1
−
−
−
−
6
−
TYP. MAX.
−
200
−
60
−
−
−
−
VP − VS −
−
10
−
100
−
1.4
−
−
−
80
UNIT
nA
nA
µA
µA
V
nA
nA
V
V
ns
handbook, full pagewidth
+40 V
BZY88-
C8V2
5 kΩ
100 µF
BY206
750
(2x)
Ω
R1
A
40 K
RG
1 nF
D.U.T
10 kΩ
20 Ω
osc.
VS
MBK189
IP and IV determined by value of R1.
R1 = I-1-A-- ; i.e. maximum voltage drop over R1 = 1 V.
Internal resistance of oscilloscope = 10 MΩ.
Fig.2 Measuring circuit for peak and valley point currents.
1999 May 31
3
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