LND820 查看數據表（PDF） - Linear Dimensions Semiconductor

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生产厂家

LND820

POWER MOSFET

Linear Dimensions Semiconductor 

LND820/821/822/823

ABSOLUTE MAXIMUM RATING

Symbol

ID@Tc=25ºC

ID@Tc=100ºC

IDM

PD @Tc=25ºC

ID@Tc=25ºC

VGS

EAS

IAR

EAR

dv/dt

TJ

TSTG

Parameter

Continuous Drain Current,VGS @ 10V

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current(1)

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy(2)

Avalanche Current (1)

Repetitive Avalanche Energy (1)

Peak Diode Recovery dv/dt(3)

Operating Junction and Storage

temperature Range

Soldering Temperature, for 10

seconds

Max

2.5

1.6

8.0

50

0.40

±20

210

2.5

5.0

3.5

-55 to +150

300

(1.6mm from case)

Units

A

W

W/ºC

V

mJ

A

mJ

V/ns

ºC

THERMAL RESISTANCE

Symbol

RoJC

RoCS

RoJA

Parameter

Min

Junction-to-case

-

Case-to-Sink, Flat,

Greased Surface

-

Junction-to-Ambint

-

Typ

-

0.50

-

Max

2.5

-

62

Units

ºC/W

• Linear Dimensions, Inc. • 445 East Ohio Street, Chicago IL 60611 USA • tel 312.321.1810 • fax 312.321.1830 • www.lineardimensions.com •

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