IRLZ44NSTRLPBF 查看數據表（PDF） - International Rectifier
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IRLZ44NSTRLPBF Datasheet PDF : 11 Pages
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IRLZ44NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.070 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.022
VGS = 10V, ID = 25A
––– ––– 0.025 Ω VGS = 5.0V, ID = 25A
––– ––– 0.035
VGS = 4.0V, ID = 21A
VGS(th)
Gate Threshold Voltage
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
21 ––– ––– S VDS = 25V, ID = 25A
IDSS
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
µ A VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
Qg
Total Gate Charge
––– ––– 48
ID = 25A
Qgs
Gate-to-Source Charge
––– ––– 8.6 nC VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
––– ––– 25
VGS = 5.0V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
––– 11 –––
VDD = 28V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 84 ––– ns ID = 25A
––– 26 –––
RG = 3.4Ω, VGS = 5.0V
tf
Fall Time
––– 15 –––
RD = 1.1Ω, See Fig. 10
LS
Internal Source Inductance
––– 7.5 –––
Between lead,
nH and center of die contact
Ciss
Input Capacitance
––– 1700 –––
VGS = 0V
Coss
Output Capacitance
––– 400 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 150 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 47
showing the
A
integral reverse
G
––– ––– 160
p-n junction diode.
S
––– ––– 1.3
––– 80 120
––– 210 320
V TJ = 25°C, IS = 25A, VGS = 0V
ns TJ = 25°C, IF = 25A
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L =470µH
RG = 25Ω, IAS = 25A. (See Figure 12)
ISD ≤ 25A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRLZ44N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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