MPSA64 查看數據表（PDF） - Philips Electronics
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MPSA64 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP Darlington transistor
Product specification
MPSA64
FEATURES
• Low current (max. 500 mA)
• Low voltage (max. 30 V)
• High DC current gain (min. 10000).
APPLICATIONS
• High gain amplification.
DESCRIPTION
PNP Darlington transistor in a TO-92; SOT54 plastic
package. NPN complement: MPSA14.
PINNING
PIN
1
2
3
collector
base
emitter
DESCRIPTION
handbook, halfpage
1
2
3
2
1
TR1
TR2
MAM253
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
VBE = 0
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−30
−30
−10
−500
−1
−100
500
+150
150
+150
UNIT
V
V
V
mA
A
mA
mW
°C
°C
°C
1999 Apr 27
2
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