BSP304 查看數據表（PDF） - Philips Electronics
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BSP304 Datasheet PDF : 9 Pages
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Philips Semiconductors
P-channel enhancement mode
vertical D-MOS transistors
Product specification
BSP304; BSP304A
100
handbook, halfpage
C
(pF)
80
60
MLC688
C iss
40
20
Coss
Crss
0
0
10
20 V DS (V) 30
VGS = 0.
Tj = 25 °C.
f = 1 MHz.
Fig.6 Capacitance as a function of drain source
voltage; typical values.
handbook8,0h0alfpage
ID
(mA)
600
P=1W
400
MLD139
VGS = 10 V
7V
6V
5V
4V
200
3.5 V
3V
0
0
2
4
6
8
10
12
V DS (V)
Tj = 25 °C.
Fig.7 Typical output characteristics.
handbook8,0h0alfpage
ID
(mA)
600
MLC689
400
200
0
0
2
4
6
8
10
V GS (V)
VDS = −25 V.
Tj = 25 °C.
Fig.8 Typical transfer characteristics.
1995 Apr 07
80
handbook, halfpage
R DSon
(Ω)
60
MLC691
40
20
0
0
2
4
6
8
10
VGS (V)
ID = −170 mA.
Tj = 25 °C.
Fig.9 Drain-source on-state resistance as a function
of gate-source voltage; typical values.
5
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