BSV52 查看數據表（PDF） - Philips Electronics
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BSV52 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistor
Product specification
BSV52
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 12 V).
APPLICATIONS
• High speed saturated switching applications, especially
in portable equipment.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
MARKING
TYPE NUMBER
BSV52
MARKING CODE(1)
B2∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
20
12
5
100
200
100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 15
2
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