MMBT2369A(1997) 查看數據表（PDF） - Fairchild Semiconductor

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MMBT2369A
(Rev.:1997)

NPN Switching Transistor

Fairchild Semiconductor 

Typical Characteristics (continued)

Fall Time vs Turn On

and Turn Off Base Currents

-6

I C= 10 mA

-5 VCC = 3.0 V

-4

t f = 7.0 ns

-3

8.0 ns

-2

10 ns

-1

0

0

2

4

6

8

10

I B1 - TURN ON BASE CURRENT (mA)

NPN Switching Transistor

(continued)

Fall Time vs Turn On

and Turn Off Base Currents

-12

I C= 30 mA

-10 VCC = 3.0 V

3. 0 ns

4. 0 ns

-8

t f = 2.0 ns

-6

5. 0 ns

-4

-2

0

0

2

4

6

8

10

12

I B1 - TURN ON BASE CURRENT (mA)

Fall Time vs Turn On

and Turn Off Base Currents

-30

I C= 100 mA

-25 VCC = 3.0 V

3.0 ns

4.0 ns

-20

t f = 2.0 ns

-15

8.0 ns

-10

12.0 ns

-5

0

0

5

10

15

20

25

30

I B1 - TURN ON BASE CURRENT (mA)

Delay Time vs Base-Emitter OFF

Voltage and Turn On Base Current

-6

I C= 10 mA

-5 V CC= 3.0 V

t d = 8.0 ns

-4

-3

5.0 ns

4.0 ns

-2

3.0 ns

-1

0

1

2

5

10

20

50

I B1 - TURN ON BASE CURRENT (mA)

Rise Time vs. Turn On Base

Current and Collector Current

50

VCC = 3.0 V

10 t r= 2.0 ns

5.0 ns

1

10 ns

20 ns

0

1

10

100

500

I C - COLLE CTOR CURRENT (mA)

Power Dissipation vs

Ambient Temperature

500

400 TO-92

300

200

SOT-23

100

0

0

25

50

75

100 125 150

TE MPE RATURE (°C)

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