BSP50 查看數據表（PDF） - Infineon Technologies

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BSP50

NPN Silicon Darlington Transistors

Infineon Technologies 

NPN Silicon Darlington Transistors

• High collector current

• Low collector-emitter saturation voltage

• Complementary types: BSP60 - BSP62 (PNP)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

BSP50-BSP52

4

3

2

1

Type

BSP50

BSP51

BSP52

Marking

Pin Configuration

BSP50 1=B 2=C 3=E 4=C -

-

BSP51 1=B 2=C 3=E 4=C -

-

BSP52 1=B 2=C 3=E 4=C -

-

Package

SOT223

SOT223

SOT223

Maximum Ratings

Parameter

Collector-emitter voltage

BSP50

BSP51

BSP52

Collector-base voltage

BSP50

BSP51

BSP52

Emitter-base voltage

Collector current

Peak collector current, tp ≤ 10 ms

Base current

Total power dissipation-

TS ≤ 124 °C

Junction temperature

Storage temperature

Symbol

VCEO

VCBO

VEBO

IC

ICM

IB

Ptot

Tj

Tstg

Value

Unit

V

45

60

80

60

80

90

5

1

A

2

100

mA

1.5

W

150

°C

-65 ... 150

1

2011-10-05

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