BULD50 查看數據表（PDF） - Power Innovations
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BULD50 Datasheet PDF : 10 Pages
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BULD50KC, BULD50SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
FEBRUARY 1994 - REVISED SEPTEMBER 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
LDX50CFB
10
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
LDX50SFB
10
1·0
1·0
BULD50KC
0·1 TC = 25°C
tp = 100 µs
tp = 1 ms
tp = 10 ms
DC Operation
0·01
1·0
10
100
VCE - Collector-Emitter Voltage - V
Figure 4.
1000
0·1
BULD50SL
TA = 25°C
tp = 100 µs
tp = 10 ms
tp = 1 s
0·01
1·0
10
100
VCE - Collector-Emitter Voltage - V
Figure 5.
1000
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
8
LDX50SRB
IB(on) = IC / 5
VBE(off) = -5 V
TA = 25°C
6
4
2
0
0 100 200 300 400 500 600 700 800
VCE - Collector-Emitter Voltage - V
Figure 6.
PRODUCT INFORMATION
4
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