NX5032SA-13.000000MHZ-G1   Datasheet

Unspecified

Crystal Unit

California Eastern Laboratories.

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

California Eastern Laboratories.

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE

California Eastern Laboratories.

LASER DIODE

Renesas Electronics

1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

Renesas Electronics

LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE

California Eastern Laboratories.

NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS

NEC => Renesas Technology

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

California Eastern Laboratories.

NEC's 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION

California Eastern Laboratories.

1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE