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IRG4BC30WS
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International Rectifier
IRG4BC30WS
Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A
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IRG4BC30W
S
International Rectifier
IRG4BC30W
INSULATED GATE BIPOLAR TRANSISTOR
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International Rectifier
IRG4BC30W
-S
Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A
View
International Rectifier
IRG4BC30W
-SPBF
_
2010
INSULATED GATE BIPOLAR TRANSISTOR
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International Rectifier
IRG4BC30W
-SPBF
INSULATED GATE BIPOLAR TRANSISTOR
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International Rectifier
IRG4BC30W
PBF
_
2004
INSULATED GATE BIPOLAR TRANSISTOR
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International Rectifier
IRG4BC30W
PBF
INSULATED GATE BIPOLAR TRANSISTOR
View
International Rectifier
IRG4BC30W
S
Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A
View
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