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Manufacturer
Part Name
Description
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International Rectifier
FB18N50K
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
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FB1
8N50K
Formosa Technology
FB1
010L
10 Amp. Glass Passivated Bridge Rectifier
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International Rectifier
FB1
8N50K
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
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Vishay Semiconductors
FB1
1N50A
Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)
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International Rectifier
FB1
1N50A
HEXFET® Power MOSFET VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
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International Rectifier
FB1
80SA10
HEXFET® Power MOSFET
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Vishay Semiconductors
FB1
90SA10
Power MOSFET, 190 A
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Vishay Semiconductors
FB1
90SA10
_
2018
Power MOSFET, 190 A
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NEC => Renesas Technology
FB1
A4M-T1B
COMPOUND TRANSISTOR
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Infineon Technologies
FB1
5R06W1E3
_
2009
EasyPIM™ module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and NTC
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Infineon Technologies
FB1
0R06W1E3
EasyPIM™ module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and NTC
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