20JL2C41A   Datasheet

Toshiba

TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE

Toshiba

Discrete IGBT - 30G124 ~ 30F125

Toshiba

Discrete IGBT - 30G124 ~ 30F125

Ohmite Mfg. Co.

Vitreous Enamel Conformal Axial Terminal Wirewound, 5% Tolerance Std.

Ohmite Mfg. Co.

Vitreous Enamel Conformal Axial Terminal Wirewound, 5% Tolerance Std.

Ohmite Mfg. Co.

Vitreous Enamel Conformal Axial Terminal Wirewound, 5% Tolerance Std.

Ohmite Mfg. Co.

Vitreous Enamel Conformal Axial Terminal Wirewound, 5% Tolerance Std.

Ohmite Mfg. Co.

Vitreous Enamel Conformal Axial Terminal Wirewound, 5% Tolerance Std.

Ohmite Mfg. Co.

Vitreous Enamel Conformal Axial Terminal Wirewound, 5% Tolerance Std.

Toshiba

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT