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10JL2C48A   Datasheet

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Manufacturer
Part Name
Description
PDF
Toshiba
Toshiba
10JL2C48A_1999
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
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Toshiba
Toshiba
10JL2C48A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
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Toshiba
Toshiba
10J303
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
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Toshiba
Toshiba
10J301
Discrete IGBT - 30G124 ~ 30F125
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SUNMATE
SUNMATE electronic Co., LTD
10JDA40
AXIAL LEADED SILICON RECTIFIER DIODES
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NI
National Instruments Corporation
10JDA10
Standard Recovery Diode
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Toshiba
Toshiba
10J301_
Discrete IGBT - 30G124 ~ 30F125
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NI
National Instruments Corporation
10JDA40
Standard Recovery Diode
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NIEC
Nihon Inter Electronics
10JDA10
DIODE
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NI
National Instruments Corporation
10JDA60
Standard Recovery Diode
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NIEC
Nihon Inter Electronics
10JDA40
DIODE
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Toshiba
Toshiba
10JL2CZ
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
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