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GB10NC60KDT4 Даташит

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STMicroelectronics

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH™ IGBT

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Vishay Semiconductors

GB100DA60UP_2010

Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

Vishay Semiconductors

GB100DA60UP

Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

GeneSiC Semiconductor, Inc.

GB100XCP12-227

IGBT/SiC Diode Co-pack

GeneSiC Semiconductor, Inc.

GB10MPS17-247_2018

Silicon Carbide Power Schottky Diode

GeneSiC Semiconductor, Inc.

GB10MPS17-247

Silicon Carbide Schottky Diode

GeneSiC Semiconductor, Inc.

GB10MPS17-247_

SiC Schottky MPS™

STMicroelectronics

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D²PAK PowerMESH™ IGBT

STMicroelectronics

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH™ IGBT

GeneSiC Semiconductor, Inc.

GB10SLT12-220_2010

Silicon Carbide Power Schottky Diode

GeneSiC Semiconductor, Inc.

GB10SLT12-220

Silicon Carbide Power Schottky Diode

GeneSiC Semiconductor, Inc.

GB10SLT12-252_2014

Silicon Carbide Power Schottky Diode

GeneSiC Semiconductor, Inc.

GB10SLT12-252_2018

Silicon Carbide Power Schottky Diode

GeneSiC Semiconductor, Inc.

GB10SLT12-252

Silicon Carbide Schottky Diode

GeneSiC Semiconductor, Inc.

GB10SLT12-252_

SiC Schottky MPS™

GeneSiC Semiconductor, Inc.

GB10SLT12-CAL_2013

Silicon Carbide Power Schottky Diode

GeneSiC Semiconductor, Inc.

GB10SLT12-CAL

Silicon Carbide Power Schottky Diode

GeneSiC Semiconductor, Inc.

GB10SLT12-CAL_

SiC Schottky MPS™

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