SUMMARY
V(BR)DSS=20V; RDS(ON)=0.18V;ID=1.7A

DESCRIPTION
This new generation of high density MOSFETs from TY utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package

APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control