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VSMF3710(2008) Даташит - Vishay Semiconductors

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Номер в каталоге
VSMF3710

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6 Pages

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132.8 kB

производитель
Vishay
Vishay Semiconductors 

DESCRIPTION
VSMF3710 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD).


FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λp = 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: fc = 12 MHz
• Good spectral matching with Si photodetectors
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component in accordance with
   RoHS 2002/95/EC and WEEE 2002/96/EC


APPLICATIONS
• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective sensors


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производитель
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero ( Rev : 2008 )
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero ( Rev : 2011 )
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero ( Rev : 2008 )
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero ( Rev : 2008 )
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero ( Rev : 2008 )
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero ( Rev : 2008 )
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero ( Rev : 2008 )
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
PDF
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
PDF
Vishay Semiconductors

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