datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Vishay Semiconductors  >>> VIT1080C-M3/4W PDF

VIT1080C-M3/4W Даташит - Vishay Semiconductors

VIT1080C image

Номер в каталоге
VIT1080C-M3/4W

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
5 Pages

File Size
116.3 kB

производитель
VISHAYSEMICONDUCTOR
Vishay Semiconductors 

FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS
    For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.

Page Link's: 1  2  3  4  5 

Номер в каталоге
Компоненты Описание
View
производитель
Dual Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors
Dual Trench MOS Barrier Schottky Rectifier ( Rev : 2013 )
PDF
Vishay Semiconductors
Dual Trench MOS Barrier Schottky Rectifier ( Rev : 2015 )
PDF
Vishay Semiconductors
Dual Trench MOS Barrier Schottky Rectifier ( Rev : 2013 )
PDF
Vishay Semiconductors
DUAL TRENCH MOS SCHOTTKY BARRIER RECTIFIER ( Rev : 2015 )
PDF
Unisonic Technologies
Dual Trench MOS Barrier Schottky Rectifier ( Rev : 2016 )
PDF
Vishay Semiconductors
Dual Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors
Dual Trench MOS Barrier Schottky Rectifier ( Rev : 2014 )
PDF
Vishay Semiconductors
Dual Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors
DUAL TRENCH MOS SCHOTTKY BARRIER RECTIFIER
PDF
Unisonic Technologies

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]