Номер в каталоге
VFT4045BP-M3/4W
Компоненты Описание
Other PDF
PDF
page
4 Pages
File Size
122.8 kB
производитель
Vishay Semiconductors
HOME >>> Vishay Semiconductors >>> VFT4045BP-M3/4W PDF
VFT4045BP-M3/4W Даташит - Vishay Semiconductors
Vishay Semiconductors
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
Номер в каталоге
Компоненты Описание
View
производитель
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Vishay Semiconductors
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection ( Rev : 2013 )
Vishay Semiconductors
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection ( Rev : 2013 )
Vishay Semiconductors
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection ( Rev : 2012 )
Vishay Semiconductors
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection ( Rev : 2010 )
Vishay Semiconductors
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection ( Rev : 2013 )
Vishay Semiconductors
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection ( Rev : 2012 )
Vishay Semiconductors
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection ( Rev : 2015 )
Vishay Semiconductors
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection ( Rev : 2018 )
Vishay Semiconductors
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Vishay Semiconductors
Share Link: 