
NEC => Renesas Technology
DESCRIPTION
The µPD16814GS is a monolithic dual H bridge driver circuit employing a power MOS FET for its driver stage. By complementing the P channel and N channel of the output stage, the circuit current is substantially improved as compared with that of the conventional charge pump driver.
Because the dual H bridge driver circuits at the output stage are independent of each other, this IC is ideal as the driver circuit for a 1- to 2-phase excitation bipolar driving stepping motor for the head actuator of an FDD.
FEATURES
• Low ON resistance (sum of ON resistance of top and bottom FETs) RON1 = 2.0 Ω TYP.
• Low current consumption: IDD = 100 µA MAX.
• Four input modes independently controlling dual H bridge drivers
• Stop and Brake modes selectable
• Surface-mount mini-mold package: 16-pin plastic SOP (300 mil)