
NEC => Renesas Technology
DESCRIPTION
The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance with system design. 3 V supply voltage and mini mold package contribute to make system lower voltage, decreased space and fewer components.
FEATURES
• Recommended operating frequency : f = 100 MHz to 1.92 GHz
• Supply voltage : VCC = 2.7 to 3.3 V
• Low current consumption : ICC = 11 mA TYP. @ VCC = 3.0 V
• Gain control voltage : VAGC = 0.6 to 2.4 V (recommended)
• Two types of gain control : µPC8119T = VAGC up vs. Gain down (Forward control) µPC8120T = VAGC up vs. Gain up (Reverse control)
• AGC control can be constructed by external control circuit.
• High-density surface mounting
APPLICATIONS
• 1.9 GHz cordless telephone (PHS base-station and so on)
• 800 MHz to 900 MHz or 1.5 GHz Digital cellular telephone (PDC800M, PDC1.5G and so on)