UPA678TB Даташит - NEC => Renesas Technology
производитель

NEC => Renesas Technology
DESCRIPTION
The µ PA678TB is a switching device, which can be driven directly by a 2.5 V power source.
The µ PA678TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.20 A)
RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.20 A)
RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)
• Two MOS FET circuits in same size package as SC-70
Номер в каталоге
Компоненты Описание
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производитель
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology