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UPA1812GR-9JG Даташит - NEC => Renesas Technology

UPA1812 image

Номер в каталоге
UPA1812GR-9JG

Компоненты Описание

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page
8 Pages

File Size
58.6 kB

производитель
NEC
NEC => Renesas Technology 

DESCRIPTION
The µPA1812 is a switching device which can be driven directly by a 4.0-V power source.
The µPA1812 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• Can be driven by a 4.0-V power source
• Low on-state resistance
   RDS(on)1 = 39 mΩ MAX. (VGS = –10 V, ID = –2.5 A)
   RDS(on)2 = 63 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
   RDS(on)3 = 69 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A)

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Номер в каталоге
Компоненты Описание
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производитель
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology

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