N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

DESCRIPTION
The SD57060 is a common source N-Channel enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and industrial applications at frequencies up to
1.0 GHz. The SD57060 is designed for high gain and broadband performance operating in
common source mode at 28V. It is ideal for base station applications requiring high linearity.

■ EXCELLENT THERMAL STABILITY
■ COMMON SOURCE CONFIGURATION
■ POUT = 60 W with 11.5 dB gain @ 945 MHz
■ BeO FREE PACKAGE