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TSAL7600 Даташит - Vishay Semiconductors

TSAL7600 image

Номер в каталоге
TSAL7600

Компоненты Описание

Other PDF
  1999   2008   2009  

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page
5 Pages

File Size
89.6 kB

производитель
Vishay
Vishay Semiconductors 

DESCRIPTION
TSAL7600 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a clear, untinted plastic package.


FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 30°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

APPLICTIONS
• Infrared remote control units with high power requirements
• Free air transmission systems
• Infrared source for optical counters and card readers

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Номер в каталоге
Компоненты Описание
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производитель
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs ( Rev : 2009 )
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs ( Rev : 2012 )
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs ( Rev : 2009 )
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs ( Rev : 2009 )
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs ( Rev : 2009 )
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
PDF
Vishay Semiconductors

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