TPCF8301(V2) Даташит - Toshiba
производитель
Toshiba
NOTE BOOK PC APPLICATIONS
PORTABLE EQUIPMENTS APPLICATIONS
◾ Low Drain - Source ON Resistance：Ｒ ＤＳ(ＯＮ)＝72ｍΩ(Typ.)
◾ High Forward Transfer Admittance：|Ｙ ｆｓ|＝6 S(Typ.)
◾ Low Leakage Current：Ｉ ＤＳＳ＝-10μＡ(Max.) (Ｖ ＤＳ＝-20Ｖ)
◾ Enhancement - Mode：Ｖ ｔｈ＝-0.5 ～ -1.2Ｖ(Ｖ ＤＳ＝-10Ｖ,Ｉ Ｄ＝-200µＡ)
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производитель
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2008 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( Rev : 2007 )
Toshiba
