Номер в каталоге
TPC8119
Компоненты Описание
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производитель
Toshiba
TPC8119(2010) Даташит - Toshiba
Toshiba
Lithium-Ion Battery Applications
Load switch Applications
Notebook PC Applications
• Small footprint due to a small and thin package
• Low drain-source ON-resistance: RDS (ON) = 10 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 24 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Номер в каталоге
Компоненты Описание
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производитель
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TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) ( Rev : 2008 )
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) ( Rev : 2009 )
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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV) ( Rev : 2009 )
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV) ( Rev : 2002 )
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TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π−MOSV) ( Rev : 1998 )
Toshiba
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