High-Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications

• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: Q SW = 3.6 nC (typ.)
• Low drain-source ON-resistance: R DS (ON) = 13.5 m Ω (typ.)
• High forward transfer admittance: |Y fs| =19 S (typ.)
• Low leakage current: I DSS = 10 μA (max) (V DS = 30 V)
• Enhancement mode: V th = 1.1 to 2.3 V (V DS = 10 V, I D = 1 mA)