Transistor Inverter
Inverters for Air Conditioner
IGBT Gate Drive
Power MOS FET Gate Drive

The TOSHIBA TLP250(INV) consists of an infrared emitting diode and a integrated photodetector.
This unit is 8-lead DIP.
TLP250(INV) is suitable for gate driving circuit of IGBT or power MOS FET.

● Input Threshold Current : IF=5mA(max)
● Supply Current : 11mA(max)
● Supply Voltage : 10 to 35V
● Output Current : ±1.5A(max)
● Switching Time(tpLH/tpHL) : 0.5μs(max)
● Isolation Voltage : 2500Vrms(min)
● UL-recognized : UL 1577, File No.E67349
● cUL-recognized : CSA Component Acceptance Service No.5A
                                File No.E67349
● VDE-Approved : EN 60747-5-5 (Note 1)

   Note 1:When a VDE approved type is needed, please designate the Option(D4).
● Creepage Distance : 6.4mm(min)
   Clearance : 6.4mm(min)