TK5P50D Даташит - Toshiba
производитель

Toshiba
Features
(1) Low drain-source on-resistance : RDS(ON) = 1.3 Ω (typ.)
(2) High forward transfer admittance : |Yfs| = 3.0 S (typ.)
(3) Low leakage current : IDSS = 10 µA (max) (VDS = 500 V)
(4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
APPLICATIONs
• Switching Voltage Regulators
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производитель
MOSFETs Silicon N-Channel MOS (π-MOSVII) ( Rev : 2011 )
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
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MOSFETs Silicon N-Channel MOS (π-MOSVII)
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MOSFETs Silicon N-Channel MOS (π-MOSVII) ( Rev : 2011 )
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MOSFETs Silicon N-Channel MOS (π-MOSVII) ( Rev : 2011 )
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba