TK12A60U(2013) Даташит - Toshiba
производитель
Toshiba
Switching Regulator Applications
• Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.)
• High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
• Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
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производитель
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
