TK12A60D Даташит - Toshiba
производитель
Toshiba
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Номер в каталоге
Компоненты Описание
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производитель
Silicon N-Channel MOS Type Field Effect Transistor
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Field Effect Transistor Silicon N Channel MOS Type
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Field Effect Transistor Silicon N Channel MOS Type
Toshiba
