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TK10J80E Даташит - Toshiba

TK10J80E image

Номер в каталоге
TK10J80E

Компоненты Описание

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9 Pages

File Size
226.5 kB

производитель
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Features
(1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.)
(2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V)
(3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)


APPLICATIONs
• Switching Voltage Regulators


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